Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials AVS Series 11 (AIP Conference Proceedings) by Seiler

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Published by American Institute of Physics .

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Subjects:

  • Atomic & molecular physics,
  • Materials science,
  • Technology,
  • Chemistry (Specific Aspects),
  • Physics (Specific Aspects),
  • Science,
  • Science/Mathematics,
  • Physics,
  • Technology / Material Science,
  • Material Science

Book details

The Physical Object
FormatHardcover
Number of Pages320
ID Numbers
Open LibraryOL8180023M
ISBN 100883189313
ISBN 109780883189313

Download Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials

Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration.

Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging.

The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration.4/5(1). Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging.

The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration.4/4(1). We report the first planar waveguides made from mercury–cadmium–telluride (MCT)—a material to date exclusively used for mid-infrared (MIR) detector elements—serving as on-chip MIR evanescent field transducers in combination with tunable quantum cascade lasers (tQCLs) emitting in the spectral regime of – μm.

This novel MIR sensing approach utilizes structured MCT chips Cited by: Physics and chemistry of mercury cadmium telluride and novel IR detector materials.

AIP Conference Proceedings, Volumepp. (AIPC Homepage). The mercury–cadmium–telluride (Hg 1–x Cd x Te) alloy system is currently one of the most important semiconductors for infrared devices because its bandgap can be varied to cover the entire spectrum from μm to over 30 μm by changing the alloy composition (Kruse ).

Among the experimental parameters for the growth of bulk or layer-type single crystals of this ternary material, the rate and. Purchase Mercury Cadmium Telluride Imagers, Volume 5 - 1st Edition. Print Book & E-Book. ISBNThis article presents a review on the current status, challenges, and potential future development opportunities for HgCdTe infrared materials and detector technology.

A brief history of HgCdTe infrared technology is firstly summarized and discussed, leading to the conclusion that HgCdTe-based infrared detectors will continue to be a core infrared technology with expanded capabilities in the Cited by: Solid State Physics Laboratory, Lucknow Road, DelhiIndia Abstract.

The inherent metallurgical problems associated with the HgTe/CdTe pseudobinary alloy system render the standard crystal growth processes inapplicable to the preparation of mercury cadmium telluride crystals for infrared detector. Ideally, a quantitative assessment of the effect of IR material characteristics on detector module cost and on system complexity should guide this process.

Mercury cadmium telluride (MCT) has been the dominant IR material for a broad range of system applications. However, the cost and availability of the MCT are major considerations in the Cited by: We use cookies to make interactions with our website easy and meaningful, to better understand the use of our services, and to tailor advertising.

Physics and Chemistry of Mercury Cadmium Telluride and novel IR detector materials. New York: American Institute of Physics, © (DLC) (OCoLC) Material Type: Document, Internet resource: Document Type: Internet Resource, Computer File: All Authors / Contributors: David G Seiler; American Institute of Physics.; American.

Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials: AVS Series 11 (AIP Conference Proceedings) D. Seiler Published by American Institute of Physics (). Mercury cadmium telluride (HgCdTe) is a pseudo binary alloy semiconductor of CdTe and HgTe, with zincblende structure.

The composition of Hg and Cd can be chosen to tune the optical properties in the infrared region. HgCdTe is transparent in the infrared at photon energies below the energy gap.

Casselman, D. Walsh, J. Myrosznyk, K. Kosai, W. Radford, E. Schulte, and O. Wu, Extended Abstracts of the U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials, Oct. 2–4San Francisco, by: Photoexcited Hot Electron Relaxation Processes in n-HgCdTe Through Impact Ionization Into Traps, Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials.

Published. June 1, Author(s)Author: David G. Seiler, J R. Lowney, Chris L. Littler, I. Yoon, M. Loloee. Optical Properties of MCT.

Chu. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China Search for more papers by this author. Chang. MicroPhysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois, USA.

Search for more papers by this author Mercury Cadmium Cited by: 1. Abstract. This chapter reviews photovoltaic (PV) HgCdTe (MCT) infrared detectors. The intent is to present an overview of those PV MCT device approaches and technologies that are having the most impact today, and to give the reader an insight into the exciting developments now taking place in Cited by: Mercury cadmium telluride (MCT) still occupies leading position between any IR detector materials, such as type II superlattices (T2SLs), lead salt alloys, InSb, quantum well and dot IR detectors.

@article{osti_, title = {Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays}, author = {Soehnel, Grant}, abstractNote = {The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance.

To study the utility of measuring the carrier lifetime, an experiment has been. The narrow band gap semiconductor, mercury cadmium telluride (HgCdTe) has been widely used to produce state-of-the art infrared imaging devices in both µm and µm atmospheric windows.

At present, these detector arrays are cooled to cryogenic temperatures to File Size: KB. The U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials was held in Danvers, Massachusetts, on OctoberThis workshop was the eleventh in a series which began in October Summary This chapter contains sections titled: Density of MCT Lattice parameter of MCT Coefficient of thermal expansion of MCT Elastic parameters of MCT Hardness and deformation characteristics of Cited by: 2.

Hg 1−x Cd x Te or mercury cadmium telluride (also cadmium mercury telluride, MCT, MerCad Telluride, MerCadTel, MerCaT or CMT) is a chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions.

The amount of cadmium (Cd) in the alloy can be chosen so as to tune the optical. Extended Abstracts on U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials DAALG 6.

AUTHOR(S) Mark Goldfarb -principal investigator 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER Palisades Institute for Research Services, Inc. The change in temperature leads to change in charge distribution of the detector and electric signal is produced.

The latter (such as mercury cadmium telluride) provide better sensitivity and faster speed than do pyroelectric detectors over a broad spectral range. However, liquid nitrogen is needed for cooling of photoconductive detectors.

American Institute of Physics Conference Proceedings Series. (–) AVS Series Editor: Gerald Lucovsky. Proceedings of Topical Conferences organized or sponsored by AVS: 1.

Frontiers in Electronic Materials & Processing Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials. San Francisco, CA, In two parts, this book describes the evolution of mercury cadmium telluride (HgCdTe) imager structures based upon published patents and patent applications.

The first part covers monolithic arrays, and the second part describes hybrid arrays. Physics and Chemistry of Mercury Cadmium Telluride” dates back to the first Workshop held in October Thereafter he was a mainstay at the II-VI Workshop, as it subsequently became known, and never missed the annual meeting.

He served on the Workshop committee, as the Proceedings Editor, Conference Co-Chair, reviewed papers and presentedFile Size: 1MB. Mercury cadmium telluride (HgCdTe) and indium antimonide (InSb), for many years the favored detector materials, have been challenged by bandgap-engineered structures such as type II superlattices and nBn bandgap-engineered, three-layer detector structures incorporating a barrier layer between the n-type layers.

Cadmium telluride is a stable crystalline compound formed from cadmium and tellurium. It is mainly used as the semiconducting material in cadmium telluride photovoltaics and an infrared optical window.

It is usually sandwiched with cadmium sulfide to form a p-n junction solar PV cell. Typically, CdTe PV cells use a n-i-p al formula: CdTe.

The current-voltage characteristics of the 64 x 64 detector arrays were measured at near-zero background using Si fan-out chips. For the detector arrays with a µm cutoff, the mean RoA for 29 random elements was x cm2 at T = K. The mean RoA was 3 x cm2 at K for detector arrays with a µm by: Electronic Materials and Processing division was organized.

Physics and Chemistry of Mercury Cadmium Telluride and novel IR detector materials: San Francisco, CA / editor, David G. Seiler. Physics and chemistry of protective coatings: Universal City, CA, / editors, W.D.

Sproul, J.E. Greene & J.A. Thornton. Photovoltaic Mercury Cadmium Telluride Detectors Photovoltaic Mercury Cadmium Telluride Short Form Catalog in PDF Format J19TE Series Photovoltaic MCT Detectors. J19TE series detectors are high-quality HgCdTe photodiodes for use in the nm to um range.

Divided into two parts, this book describes the evolution of mercury cadmium telluride (HgCdTe) imager structures based upon published patents and patent applications. It focuses on the steps of manufacturing and structures of imagers. Abstract. This article reviews published data on the mechanical properties of additively manufactured metallic materials.

The additive manufacturing techniques utilized to generate samples covered in this review include powder bed fusion (e.g., EBM, SLM, DMLS) and Cited by: Mercury Cadmium Telluride Focal-plane Array Detection for Mid-infrared Fourier Transform Spectroscopic ImagingCited by: AIP Conference Proceedings (American Institute of Physics); (United States) Additional Journal Information: Journal Volume: ; Conference: Physics and chemistry of mercury cadmium telluride and novel IR detector materials, San Francisco, CA (United States), Oct ; Journal ID: ISSN X Country of Publication: United States Language.

AbstractInfrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the by: J15 Series Mercury Cadmium Telluride Detectors HgCdTe is a ternary semiconductor compound which exhibits a wavelength cutoff proportional to the alloy composition.

The actual detector is composed of a thin layer (10 to 20 µm) of HgCdTe with metalized contact pads defining the active area. Abstract. In this article, device modeling refers to numerical simulation of semiconductor device physics to predict electrical behavior.

The silicon integrated circuit industry provides the example for the use of technology computer-aided design to simulate wafer fabrication processes, and the electrical performance of devices and by: Structure, properties, spectra, suppliers and links for: mercury cadmium telluride.Type II Strained Layer Superlattice Based Infrared Detectors.

All of these applications bode well for the unique niche that the novel IR semiconductor materials fill. The earlier military applications withstood the expense of less stable and convenient material such as HgxCd1-xTe mercury-cadmium telluride .

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